NiCd/NiMH Battery

Fast-Charge Controllers

2

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ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

BATT-, not GND.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

V+ to BATT- .................................................................-0.3V, +7V

BATT- to GND ........................................................................±1V

BATT+ to BATT-

Power Not Applied............................................................±20V

With Power Applied ................................The higher of ±20V or

±2V x (programmed cells)

DRV to GND ..............................................................-0.3V, +20V

FASTCHG to BATT- ...................................................-0.3V, +12V

All Other Pins to GND......................................-0.3V, (V+ + 0.3V)

V+ Current.........................................................................100mA

DRV Current. .....................................................................100mA

REF Current.........................................................................10mA

Plastic DIP (derate 10.53mW/°C above +70°C............842mW

Narrow SO (derate 8.70mW/°C above +70°C .............696mW

CERDIP (derate 10.00mW/°C above +70°C ................800mW

Operating Temperature Ranges

MAX71_C_E .......................................................0°C to +70°C

MAX71_E_E .................................................... -40°C to +85°C

MAX71_MJE ................................................. -55°C to +125°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

V+ = 0V, BATT+ = 17V

PGM3 = BATT-

PGM3 = REF

PGM3 = open

PGM3 = V+

0V < TEMP < 2V, TEMP voltage rising

Per cell

PGM0 = PGM1 = BATT-, BATT+ = 30V

PGM0 = PGM1 = V+

CONDITIONS

mA

30

DRV Sink Current

%

-1.5

1.5

Battery-Voltage to Cell-Voltage

Divider Accuracy

%

-15

15

Timer Accuracy

mV

26.0

31.3

38.0

Trickle-Charge VSENSE

12.0

15.6

20.0

4.5

7.8

12.0

1.5

3.9

7.0

mV

225

250

275

Fast-Charge VSENSE

V

1.6

1.65

1.7

Internal Cell Voltage Limit

mV

-30

30

VLIMIT Accuracy

µA

-1

1

THI, TLO, TEMP, VLIMIT Input Bias Current

µA

5

BATT+ Leakage

mA

5

V

4.5

5.5

V+ Voltage

mV

-10

10

THI, TLO Offset Voltage (Note 2)

V

02

THI, TLO, TEMP Input Range

V

1.25

2.50

External VLIMIT Input Range

V

0.35

0.50

Undervoltage Lockout

k

Ω

30

BATT+ Resistance with Power On

µF

0.5

C1 Capacitance

nF

5

C2 Capacitance

V

1.96

2.04

REF Voltage

UNITS

MIN

TYP

MAX

PARAMETER

MAX712

MAX713

per cell

0

Voltage-Slope Sensitivity (Note 3)

-2.5