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D50N03L Datasheet(PDF) 5 Page - STMicroelectronics |
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D50N03L Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() STD50N03L - STD50N03L-1 Electrical characteristics 5/16 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=15V, ID= 25A, RG= 4.7Ω, VGS= 4.5V (see Figure 12) 15 125 ns ns td(off) tf Turn-off delay time Fall time VDD= 15V, ID= 25A, RG= 4.7Ω, VGS= 4.5V (see Figure 12) 14 45 ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 40 160 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD= 20A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 40A, di/dt = 100A/µs, VDD= 10 V, Tj = 25°C (see Figure 17) 26 15.6 1.2 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 40A, di/dt = 100A/µs, VDD= 10V, Tj= 150°C (see Figure 17) 26.4 18.1 1.4 ns nC A |
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