STD616A datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

6.25

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0 V)

VCE = 1000 V

Tj = 125

0.5

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

L = 25 mH

450

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 1 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 250 mA

IB = 65 mA

IC = 0.8 A

IB = 250 mA

0.3

0.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 250 mA

IB = 65 mA

IC = 0.8 A

IB = 250 mA

1.2

hFE

∗

DC Current Gain

IC = 200

µA

VCE = 5 V

IC = 300 mA

VCE = 5 V

IC = 480 mA

VCE = 5 V

IC = 1.6 A

VCE = 5 V

ton

RESISTIVE LOAD

Turn On Time

Storage Time

Fall Time

VCC = 250 V

IC = 250 mA

IB1 = 65 mA

IB2= -130 mA

0.2

0.65

µs

ton

RESISTIVE LOAD

Turn On Time

Storage Time

Fall Time

VCC = 250 V

IC = 0.8 A

IB1 = 160 mA

IB2 = -0.4 A

2.5

0.35

µs

INDUCTIVE LOAD

Storage Time

Fall Time

Vcl = 300 V

IC = 250 mA

IB1 = 65 mA

IB2 = -130 mA

L = 200

µH

0.5

µs

INDUCTIVE LOAD

Storage Time

Fall Time

Vcl = 300 V

IC = 0.8 A

IB1 = 160 mA

IB2= -0.4 A

L = 200

µH

2.5

0.25

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

STD616A

2/6

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