STGD6NC60H_07 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STGD6NC60H

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC= 1mA, VGE= 0

600

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15V, IC= 3A

VGE= 15V, IC= 3A, Tc= 125°C

1.9

1.7

2.5

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

ICES

Collector cut-off current

(VGE = 0)

VCE= Max rating,TC= 25°C

VCE=Max rating,TC= 125°C

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20V, VCE= 0

±100

gfs

Forward transconductance

VCE = 15V, IC= 3A

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

205

5.5

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390V, IC = 3A,

VGE = 15V,

(see Figure 16)

13.6

3.4

5.1

ICL

Turn-off SOA minimum

current

Vclamp=390V, Tj=150°C,

RG=10Ω, VGE=15V

STGD6NC60H Datasheet(PDF) 4 Page - STMicroelectronics

STGD6NC60H Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL