STL100NH3LL_07 datasheet(3/12 Pages) STMICROELECTRONICS

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STL100NH3LL

Electrical ratings

3/12

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

(1)

Continuous mode

Gate-source voltage

± 16

VGS

(2)

Guaranteed for test time < 15ms

Gate-source voltage

± 18

(3)

The value is rated according Rthj-c

Drain current (continuous) at TC = 25°C

100

(3)

Drain current (continuous) at TC = 100°C

(5)

Drain current (continuous) at TC=100°C

15.6

IDM

(4)

Pulse width limited by safe operating area

Drain current (pulsed)

100

(5)

The value is rated according Rthj-pcb

Drain current (continuous) at TC = 25°C

PTOT

(3)

Total dissipation at TC = 25°C

PTOT

(5)

Total dissipation at TC = 25°C

Derating factor

0.03

W/°C

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case (Drain) (steady state)

1.56

°C/W

Rthj-pcb

(1)

When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec

Thermal resistance junction-ambient

31.3

°C/W

Table 3.

Avalanche data

Symbol

Parameter

Value

Unit

IAV

Not-repetitive avalanche current,

(pulse width limited by Tj Max)

12.5

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iav, Vdd=24V)

1.3

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