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STP60NH2LL Datasheet(PDF) 5 Page - STMicroelectronics |
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STP60NH2LL Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() STP60NH2LL Electrical characteristics 5/14 Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current 40 A ISDM Source-drain current (pulsed) 160 A VSD (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=20A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=40A, di/dt = 100A/µs, VDD=15V, Tj=150°C (see Figure 15) 32.5 28 1.7 ns µC A |
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