| Electronic Components Datasheet Search |
|
STS17NH3LL Datasheet(PDF) 4 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STS17NH3LL Datasheet(HTML) 4 Page - STMicroelectronics |
|
4 / 12 page ![]() Electrical characteristics STS17NH3LL 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min Typ. Max Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 16V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 1 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 8.5A VGS = 4.5V, ID = 8.5A 0.004 0.005 0.0057 0.0075 Ω Ω Table 4. Dynamic Symbol Parameter Test conditions Min Typ. Max Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS=25V, f=1MHz, VGS = 0 1810 565 41 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15V, ID=17A VGS=4.5V (see Figure 13) 18 4.8 5.3 24 nC nC nC RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 0.5 1.5 3 Ω |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |