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2PD601AW Datasheet(PDF) 1 Page - Nanjing International Group Co |
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2PD601AW Datasheet(HTML) 1 Page - Nanjing International Group Co |
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1 / 3 page ![]() 2PD601AW TRANSISTOR (NPN) FEATURES High Collector Current Low Colletor-Emitter Saturation Voltage APPLICATIONS General Purpose Switching and Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current 100 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Operation Junction and Storage Temperature Range TJ,Tstg -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 10 nA Emitter cut-off current IEBO VEB=5V, IC=0 10 nA hFE(1)* VCE=2V, IC=100mA 90 DC current gain hFE(2) VCE=10V, IC=2mA 160 460 Collector-emitter saturation voltage VCE(sat)* IC=100mA, IB=10mA 0.5 V 2PD601AQW 100 2PD601ARW 120 Transition frequency fT VCE=10V,IC=2mA,f=100MHz 2PD601ASW 140 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 3.5 pF *Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%. CLASSIFICATION OF hFE(2) RANK Q R S RANGE 160–260 210–340 290–460 MARKING 6D 6E 6F SOT–323 1. BASE 2. EMITTER 3. COLLECTOR SOT-323 Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com 1/3 |
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