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MAC12SN Datasheet(PDF) 2 Page - ON Semiconductor

Part # MAC12SN
Description  Sensitive Gate Triacs Silicon Bidirectional Thyristors
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MAC12SN Datasheet(HTML) 2 Page - ON Semiconductor

  MAC12SN Datasheet HTML 1Page - ON Semiconductor MAC12SN Datasheet HTML 2Page - ON Semiconductor MAC12SN Datasheet HTML 3Page - ON Semiconductor MAC12SN Datasheet HTML 4Page - ON Semiconductor MAC12SN Datasheet HTML 5Page - ON Semiconductor  
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MAC12SM, MAC12SN
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
2.2
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
−
−
−
−
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ± 17 A)
VTM
−
−
1.85
V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
−
−
−
1.5
2.5
2.7
5.0
5.0
5.0
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
IH
−
2.5
10
mA
Latching Current (VD = 12 V, IG = 5 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
−
−
−
3.0
5.0
3.0
15
20
15
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
0.45
0.45
0.45
0.68
0.62
0.67
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, TJ = 110°C,
f = 500 Hz, Snubber: Cs = 0.01
mf, Rs = 15 W)
(di/dt)c
8.0
10
−
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 67% VDRM, Exponential Waveform, RGK = 1 KW, TJ = 110°C)
dV/dt
15
40
−
V/
ms
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40
msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz
di/dt
−
−
10
A/
ms
2. Pulse Test: Pulse Width
≤ 2.0 ms, Duty Cycle ≤ 2%.
+ Current
+ Voltage
VTM
IH
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 −
VTM
IH
VTM
Maximum On State Voltage
IH
Holding Current



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