Electronic Components Datasheet Search
  English  ▼

X  

BD680A Datasheet(PDF) 2 Page - ON Semiconductor

Part # BD680A
Description  Plastic Medium?뭁ower Silicon PNP Darlingtons
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BD680A Datasheet(HTML) 2 Page - ON Semiconductor

  BD680A Datasheet HTML 1Page - ON Semiconductor BD680A Datasheet HTML 2Page - ON Semiconductor BD680A Datasheet HTML 3Page - ON Semiconductor BD680A Datasheet HTML 4Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
BD676, 676A
(IC = 50 mAdc, IB = 0)
BD678, 678A
BD680, 680A
BD682
BVCEO
45
60
80
100
−
−
−
−
Vdc
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ICEO
−
500
mAdc
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO. IE = 0, TC = 100°C)
ICBO
−
−
0.2
2.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
−
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD676, 678, 680, 682
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676A, 678A, 680A
hFE
750
750
−
−
−
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc)
BD678, 680, 682
(IC = 2.0 Adc, IB = 40 mAdc)
BD676A, 678A, 680A
VCE(sat)
−
−
2.5
2.8
Vdc
Base−Emitter On Voltage (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD678, 680, 682
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676A, 678A, 680A
VBE(on)
−
−
2.5
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
1.0
−
−
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
50
40
10
5.0
0
15
30
45
60
75
105
135 150 165
Figure 1. Power Temperature Derating
TC, CASE TEMPERATURE (°C)
120
90
45
20
15
30
25
35
Figure 2. DC Safe Operating Area
5.0
1.0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.05
2.0
5.0
10
50
100
BONDING WIRE LIMIT
THERMAL LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
TC = 25°C
BD676, 676A
BD678, 678A
BD680, 680A
BD682
20
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.



Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com