2SC1959 datasheet(2/5 Pages) DGNJDZ

Part #	2SC1959

Description	TO-92 Plastic-Encapsulate Transistors

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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2 / 5 page

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T =25

unless otherwise specified

Parameter

Symbol

Test

conditions

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 100µA, IE=0

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1mA , IB=0

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

Collector cut-off current

ICBO

VCB= 35V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB= 5 V, IC=0

0.1

µA

hFE(1)

VCE=1 V, IC= 100mA

400

DC current gain

hFE(2)

VCE=6 V, IC= 400mA

Collector-emitter saturation voltage

VCE(sat)

IC= 100mA, IB= 10mA

0.25

Base-emitter voltage

VBE

VCE= 1V, IC= 100mA

1.0

Transition frequency

f T

VCE= 6V, IC=20mA

300

MHz

Collector output capacitance

Cob

VCB=6V,IE=0,f=1MHz

CLASSIFICATION OF hFE

Rank

hFE(1)

70-140

120-240

200-400

Ra nge

hFE(2)

25(min)

40(min)

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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