MJD31C datasheet(2/8 Pages) ONSEMI

2 / 8 page

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

MJD31, MJD32

MJD31C, MJD32C

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

MJD31, MJD32

(VCE = 60 Vdc, IB = 0)

MJD31C, MJD32C

ICEO

−

mAdc

Collector Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ICES

−

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

hFE

−

Collector−Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

VCE(sat)

−

1.2

Vdc

Base−Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

VBE(on)

−

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

−

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

−

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

2. fT = ⎪hfe⎪• ftest.

MJD31C Datasheet(PDF) 2 Page - ON Semiconductor

MJD31C Datasheet(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL