MLD2N06CL datasheet(2/7 Pages) ONSEMI

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MLD2N06CL

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DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS

Rating

Symbol

Value

Unit

Single Pulse Drain−to−Source Avalanche Energy

(Starting TJ = 25°C, ID = 2.0 A, L = 40 mH)

EAS

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Internally Clamped)

(ID = 20 mAdc, VGS = 0 Vdc)

(ID = 20 mAdc, VGS = 0 Vdc, TJ = 150°C)

V(BR)DSS

Vdc

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)

(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

0.6

6.0

5.0

mAdc

Gate−Source Leakage Current

(VG = 5.0 Vdc, VDS = 0 Vdc)

(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150°C)

IGSS

−

0.5

1.0

5.0

mAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(ID = 250 mAdc, VDS = VGS)

(ID = 250 mAdc, VDS = VGS, TJ = 150°C)

VGS(th)

1.0

0.6

1.5

1.0

2.0

1.6

Vdc

Static Drain Current Limit

(VGS = 5.0 Vdc, VDS = 10 Vdc)

(VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150°C)

ID(lim)

3.8

1.6

4.4

2.4

5.2

2.9

Adc

Static Drain−to−Source On−Resistance

(ID = 1.0 Adc, VGS = 5.0 Vdc)

(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150°C)

RDS(on)

−

0.3

0.53

0.4

0.7

Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc)

gFS

1.0

1.4

−

mhos

Static Source−to−Drain Diode Voltage (IS = 1.0 Adc, VGS = 0 Vdc)

VSD

−

1.1

1.5

Vdc

RESISTIVE SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(VDD = 30 Vdc, ID = 1.0 Adc,

VGS(on) = 5.0 Vdc, RGS = 25W)

td(on)

−

1.0

1.5

Rise Time

−

3.0

5.0

Turn−Off Delay Time

td(off)

−

5.0

8.0

Fall Time

−

3.0

5.0

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

Figure 1. Output Characteristics

Figure 2. Transfer Function

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

VDS ≥ 7.5 V

TJ = 150°C

°C

−55

°C

2.5

2.0

1.5

1.0

0.5

3.0

3.5

4.0

456

6.0 V

5.5 V

5.0 V

4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

2.0 V

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