2SD1513 datasheet(2/4 Pages) DGNJDZ

Part #	2SD1513

Description	TO-92 Plastic-Encapsulate Transistors

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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2 / 4 page

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T =25

unless otherwise specified

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA,IE=0

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

Collector cut-off current

ICBO

VCB=16V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=6V,IC=0

0.1

μA

hFE(1)

VCE=2V, IC=100mA

135

650

DC current gain

hFE(2)

VCE=2V, IC=1.5A

100

VCE(sat)(1)

IC=1A,IB=10mA

0.4

VCE(sat)(2)

IC=1.5A,IB=20mA

0.5

Collector-emitter saturation voltage

VCE(sat)(3)

IC=1.5A,IB=75mA

0.5

Base-emitter saturation voltage

VBE (sat)

IC=1.5mA,IB=75mA

1.2

Base-emitter voltage

VBE

VCE=6V, IC=5mA

0.55

0.65

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

Transition frequency

VCE=10V,IC=50mA

100

MHz

CLASSIFICATION OF hFE（1）

RANK

RANGE

135-270

200-400

300-650

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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