2SD1616A datasheet(2/5 Pages) DGNJDZ

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T =25

unless otherwise specified

rameter

Symbol

Test c onditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 10μA , IE=0

120

Collector-emitter breakdown voltage

V(BR)CEO

IC= 2mA , IB=0

Emitter-base breakdown voltage

V(BR)EBO

IE= 10μA, IC=0

Collector cut-off current

ICBO

VCB=60V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=6V, IC=0

0.1

μA

hFE1

VCE=2 V, IC= 100mA

135

600

DC current gain

hFE2

VCE=2 V, IC= 1A

Collector-emitter saturation voltage *

VCE(sat)

IC= 1A, IB=50mA

0.3

Base-emitter saturation voltage *

VBE(sat)

IC= 1A, IB=50mA

1.2

Base-emitter voltage *

VBE

VCE= 2V, IC=50mA

0.6

0.7

Transition frequency

VCE=2 V, IC= 100mA

100

MHz

Output capacitance

Cob

VCB=10 V,IE= 0, f=1MHz

Turn on time

ton

0.07

μs

Storage time

0.95

μs

Fall time

Vcc=10V, IC=100mA,

IB1=-IB2=10mA

0.07

μs

*pulse test: PW≤350µS, δ≤2%.

CLASSIFICA TION OF hFE1

Rank L

Range

135-270

200-400

300-600

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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