UTC S8550

PNP EPITAXIAL SILICON TRANSISTOR

QW-R201-014,A

CLASSIFICATION OF hFE2

RANK

C

D

E

RANGE

120-200

160-300

280-400

TYPICAL PERFORMANCE CHARACTERISTICS

Fig.1 Static characteristics

Collector-Emitter voltage ( V)

0

0.4

0.8

1.2

1.6

2.0

0

0.1

0.2

0.3

0.4

0.5

Fig.2 DC current Gain

Ic,Collector current (mA)

10

2

10

1

10

0

10

3

10

3

10

2

10

1

10

0

10

-1

Fig.3 Base-Emitter on Voltage

10

-1

10

0

10

1

10

2

Base-Emitter voltage (V)

0

0.2

0.4

0.6

0.8

1.0

Ic,Collector current (mA)

10

3

10

2

10

1

10

0

10

-1

10

1

10

2

10

3

10

4

Fig.4 Saturation voltage

Fig.5 Current gain-bandwidth

product

Fig.6 Collector output

Capacitance

Ic,Collector current (mA)

10

0

10

1

10

2

10

3

10

0

10

1

10

2

Collector-Base voltage (V)

10

3

10

3

10

0

10

1

10

2

10

0

10

1

10

2

10

3

f=1MHz

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

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presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.