1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

1000

V

VGS

Gate-source voltage

±30

V

ID

Drain current (continuous) at TC = 25 °C

2.2

A

Drain current (continuous) at TC = 100 °C

1

IDM(1)

Drain current (pulsed)

8.8

A

PTOT

Total power dissipation at TC = 25 °C

90

W

ESD

Gate-source human body model (R = 1.5 kΩ, C = 100 pF)

3

kV

dv/dt(2)

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Storage temperature range

-55 to 150

°C

TJ

Operating junction temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 2.2 A, di/dt ≤ 200 A/μs, VDS (peak) ≤ V(BR)DSS, VDD ≤ V(BR)DSS.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

1.39

°C/W

RthJA (1)

Thermal resistance, junction-to-ambient

50

°C/W

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.)

2.5

A

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)

110

mJ

STD4NK100Z

Electrical ratings

DS8902 - Rev 3

page 2/15