D(2, TAB)

G(1)

S(3)

AM01476v1_tab

Features

Order code

VDS

RDS(on) max.

ID

STWA40N60M2

600 V

88 mΩ

34 A

•

Extremely low gate charge

•

Excellent output capacitance (Coss) profile

•

100% avalanche tested

•

Zener-protected

Applications

•

Switching applications

•

LLC resonant converters

Description

This device is an N-channel Power MOSFET developed using MDmesh M2

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

Product status link

STWA40N60M2

Product summary

Order code

STWA40N60M2

Marking

40N60M2

Package

TO-247 long leads

Packing

Tube

N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET

in a TO-247 long leads package

STWA40N60M2

Datasheet

DS11877 - Rev 2 - October 2020

For further information contact your local STMicroelectronics sales office.

www.st.com