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IMX17 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # IMX17
Description  GENERAL PURPOSE DUAL TRANSISTOR
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

IMX17 Datasheet(HTML) 2 Page - Unisonic Technologies

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UTC IMX17
DUAL TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R215-001,B
The following characteristics apply to both Tr1 and Tr2.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
Ic
500
mA
Collector dissipation
Pd
300 (TOTAL)
mW (note)
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 200mW per element must not be exceeded.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
BVCBO
Ic=100
µA
60
V
Collector-emitter breakdown voltage
BVCEO
Ic=1mA
50
V
Emitter-base breakdown voltage
BVEBO
IE=100
µA
5
V
Collector cutoff current
ICBO
VCB=30V
0.1
µA
Emitter cutoff current
IEBO
VEB=4V
0.1
µA
Collector-emitter saturation voltage
VCE(sat)
Ic=500mA, IB=50mA
0.6
V
DC current gain
hFE
VCE=3V,Ic=100mA (note)
120
390
Transition frequency
fT
VCE=5V, IE=-20mA, f=100MHz
250
MHz
Output capacitance
Cob
VCE=10V, IE=0A, f=1MHz
7
pF
Note: Measured using pulse current.
CLASSIFICATION OF hFE
RANK
A
B
RANGE
120-240
240-390
ELECTRICAL CHARACTERISTIC CURVES



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