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2SA1627 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 2SA1627
Description  PNP EPITAXIAL SILICON TRANSISTOR
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SA1627 Datasheet(HTML) 2 Page - Unisonic Technologies

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UTC2SA1627
PNPEPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R204-010,B
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output Capacitance
Cob
VCB= -10V, IE=0, f=1.0MHz
42
50
pF
Turn-On Time
ton
0.1
0.5
µs
Storage Time
tstg
3.5
5.0
µs
Fall Time
tf
Ic =-0.5A,RL=500Ω
IB1= -IB2= -0.1A
Vcc =-250V
0.08
0.5
µs
*2 : Pulsed PW≦350µs,Duty Cycle≦2%
CLASSIFICATION OF hFE1
RANK
M
L
K
RANGE
30-60
40-80
60-120
TYPICAL CHARACTERISTICS
-0.005 -0.01 -0.02
-0.05
-3.0
-0.03
Ic -Collector Current (A)
Collector And Base Saturation
Voltage vs.Collector Current
-0.1 -0.2
-0.5
-0.1
-0.3
-1.0
Ic =5IB
VBE(sat)
VcE(sat)
0
-2.0
-4.0
-6.0
-8.0
0
VCE -Collector to Emitter Voltage (V)
Collector Current vs.
Collector to Emitter Voltage
-20
-10
-40
-60
-80
-100
IB=0.2mA
IB=0.4mA
IB=0.6mA
IB=0.8mA
IB=1.0mA
IB=1.2mA
IB=1.4mA
IB=1.6mA
IB=1.8mA
VCE= -5.0V
Collector Current vs.
Base to Emitter Voltage
-0.003
-0.01
-0.03
-0.1
-0.3
-1.0
0 -0.2 -0.4 -0.6 -0.8
VBE -Base to Emitter Voltage (V)
-1.0 -1.2 -1.4 -1.6
300
100
-0.002 -0.005
-0.02
DC Durrent Gain vs. Collector Current
1
30
10
3
Ic -Collector Current (A)
-0.01
-0.05
-0.1 -0.2
-0.5 -1.0
-
2.0
1000
VCE= -5.0V



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