2SD718 datasheet(1/3 Pages) UTC

Part #	2SD718

Description	HIGH POWER AMPLIFIER APPLICATION

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC2SD718

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD.

1

QW-R214-003,A

HIGH POWER AMPLIFIER

APPLICATION

FEATURES

*Recommended for 45~50W Audio Frequency

*Amplifier Output Stage.

*Complementary to 2SB688.

TO-3P

1

1: BASE 2:COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCEO

120

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

Ic

10

A

Base Current

IB

1

A

Collector Power Dissipation (Tc=25℃)

Pc

80

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55 ~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃,unless otherwise specified))

PARAMETER

SYMBOL

TEST CONDITION

MIN

TYP

MAX UNIT

Collector-Emitter Breakdown Voltage

V(BR)CEO

Ic=50mA,IB=0

120

V

Collector Cut-off Current

ICBO

VCB=120V,IE=0

10

μ

A

Emitter Cut-off Current

IEBO

VEB=5V,Ic=0

10

μ

A

DC Current Gain

HFE

VCE=5V,Ic=1A

55

160

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=6A,IB=0.6A

2.0

V

Base-Emitter Voltage

VBE

VCE=5V,Ic=5A

1.5

V

Transition Frequency

fT

VCE=5V,Ic=1A

12

MHz

Collector Output Capacitance

Cob

VCB=10V,IE=0, f=1MHz

170

pF

CLASSIFICATION OF hFE

RANK

R

O

RANGE

55-110

80-160

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