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MJE13005 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # MJE13005
Description  NPN SILICON POWER TRANSISTORS
PDF  8 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MJE13005 Datasheet(HTML) 2 Page - Unisonic Technologies

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MJE13005
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R203-018,D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO(SUS)
400
V
Collector-Emitter Voltage
VCBO
700
V
Emitter Base Voltage
VEBO
9
V
Continuous
Ic
4
A
Collector Current
Peak (1)
ICM
8
A
Continuous
IB
2
A
Base Current
Peak (1)
IBM
4
A
Continuous
IE
6
A
Emitter Current
Peak (1)
IEM
12
A
2
W
Total Power Dissipation at Ta=25℃
Derate above 25℃
PD
16
mW/℃
75
W
Total Power Dissipation at TC=25℃
Derate above 25℃
PD
600
mW/℃
Operating and Storage Junction Temperature Range
TJ , TSTG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MAX
UNIT
Thermal Resistance, Junction to Ambient
θJA
62.5
℃
/W
Thermal Resistance, Junction to Case
θJC
1.67
℃
/W
(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
ELECTRICAL CHARACTERISTICS (Tc=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
*OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
VCEO(SUS) Ic=10mA , IB=0
400
V
Collector Cutoff Current
ICBO
VCBO=Rated Value, VBE(OFF)=1.5 V
VCBO=Rated Value, VBE(OFF)=1.5V,
Tc=100℃
1
5
mA
Emitter Cutoff Current
IEBO
VEB=9V, Ic=0
1
mA
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Is/b
See Figure 11
Clamped Inductive SOA with Base
Reverse Biased
RBSOA
See Figure 12
*ON CHARACTERISTICS (1)
hFE1
Ic=1A, VCE=5V
10
60
DC Current Gain
hFE2
Ic=2A, VCE=5V
8
40
Ic=1A, IB=0.2A
0.5
V
Ic=2A, IB=0.5A
0.6
V
Ic=4A, IB=1A
1
V
Collector-Emitter Saturation Voltage
VCE(SAT)
Ic=2A, IB=0.5A, Ta=100℃
1
V
Ic=1A, IB=0.2A
1.2
V
Ic=2A, IB=0.5A
1.6
V
Base-Emitter Saturation Voltage
VBE (SAT)
Ic=2A, IB=0.5A, Tc=100℃
1.5
V
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
Ic=500mA, VCE=10V, f=1MHz
4
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=0.1MHz
65
pF



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