UTCPUMT1 PNP EPITAXIAL SILICON TRANSISTOR

2

QW-R218-001,A

The following characteristics apply to both Tr1 and Tr2

PARAMETER

SYMBOL

RATING

UNIT

Collector-base voltage

-50

V

Collector-emitter voltage

-40

V

Emitter-base voltage

-5

V

Collector current (DC)

Ic

-100

mA

Peak collector current

-200

mA

Peak base current

-200

mA

Collector Power Dissipation (total)

300

mW

Junction temperature

150

℃

Storage temperature

-65~+150

℃

PARAMETER

SYMBOL

CONDITION

MIN

MAX

UNIT

-100

nA

Collector cut-off current

-10

μ

A

Emitter cut-off current

-100

nA

DC current gain

120

Collector-emitter saturation voltage

Ic=-50mA, IB=-5mA (note 1)

-200

mV

Collector capacitance

Cc

2.2

pF

Transition frequency

100

MHz

Note:1. Pulse test: tp≤300µs, δ≤0.02

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.