PJQ1908

July 25,2023

PJQ1908-REV.00

Page 2

Electrical Characteristics (TA=25

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250uA

50

-

-

V

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

0.5

0.86

1

Drain-Source On-State Resistance

RDS(on)

VGS=10V, ID=500mA

-

1.2

1.45

Ω

VGS=4.5V, ID=200mA

-

1.3

1.95

VGS=2.5V, ID=100mA

-

1.7

4

VGS=1.8V, ID=10mA

-

3

6

Zero Gate Voltage Drain Current

IDSS

VDS=50V, VGS=0V

-

-

1

uA

Gate-Source Leakage Current

IGSS

VGS=±20V, VDS=0V

-

-

±10

Dynamic(Note 6)

Total Gate Charge

Qg

VDS=25V, ID=500mA,

VGS=4.5V(Note 1,2)

-

0.95

-

nC

Gate-Source Charge

Qgs

-

0.34

-

Gate-Drain Charge

Qgd

-

0.32

-

Input Capacitance

Ciss

VDS=25V, VGS=0V,

f=1MHz

-

36

-

pF

Output Capacitance

Coss

-

11

-

Reverse Transfer Capacitance

Crss

-

6.6

-

Turn-On Delay Time

td(on)

VDD=25V, ID=500mA,

VGS=10V,

RG=3

Ω(Note 1,2)

-

2.3

-

ns

Turn-On Rise Time

tr

-

20

-

Turn-Off Delay Time

td(off)

-

7

-

Turn-Off Fall Time

tf

-

20

-

Drain-Source Diode

Diode Forward Current

IS

---

-

-

500

mA

Diode Forward Voltage

VSD

IS=500mA, VGS=0V

-

0.9

1.5

V

NOTES :

1.

Pulse width<300us, Duty cycle<2%.

2.

Essentially independent of operating temperature typical characteristics.

3.

Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty

cycles to keep initial TJ =25°C.

4.

The maximum current rating is package limited.

5.

RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper.

6.

Guaranteed by design, not subject to production testing.