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2SA1774 Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SA1774 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTC2SA1774 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R221-011,A ELECTRICAL CHARACTERISTICS CURVES -0.2 -0.1 BASE TO EMITTER VOLTAGE, VBE (V) -50 -0.4 0 COLLECTOR TO MITTER VOLTAGE, VCE (V) -1.2 -2 -2.0 -10 -2 -8 -6 -1.0 Ta=100℃ 25℃ .40℃ -10 -0.5 -4 0 -0.8 -1.6 -0.4 -0.6 -0.8 -1.2 -1.4 -1.6 Grounded emitter propagation characteristics -0.2 -1 -5 -20 VCE= -6V Grounded emitter output characteristics (I) Ta=25℃ -31.5 -35.0 -24.5 -28.0 -21.0 -17.5 -14.0 -10.5 -7.0 -3.5μA IB=0 -0.2 COLLECTOR CURRENT, IC (mA) 500 -1 COLLECTOR TO MITTER VOLTAGE, V CE (V) -3 -20 -5 -100 100 -80 -60 -5 200 50 -40 0 -2 -4 -0.5 -1 -2 -10 -20 -50 DC current gain vs. collector current (I) Grounded emitter output characteristics (II) Ta=25℃ -500 -450 -400 -350 -300 -250 -150 -100 -50μA IB=0 -200 Ta=25℃ VCE= -5V -3V -1V -100 -0.2 COLLECTOR CURRENT, IC (mA) -1 -0.5 COLLECTOR CURRENT, IC (mA) -5 -100 500 -0.1 200 100 -5 -0.2 -0.05 50 -0.2 -2 -20 -0.5 -1 -2 -10 -20 -50 Collector-emitter saturation voltage vs. collector current (I) DC current gain vs. collector current (II) -100 VCE= -6V Ta=100℃ 25℃ -40℃ -1 -10 -50 Ta=25℃ IC/IB=50 20 10 -0.5 |
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