2SB798 datasheet(2/3 Pages) UTC

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UTC2SB798

PNP EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R208-020,A

ELECTRICAL CHARACTERISTICS CURVES

100

1.0

Ta-Ambient Temperature -

℃

Collector Dissipation vs.

Ambient Temperature

150

0.5

200

250

1.5

2.0

2.5

When mounted on a ceramic

substrate of 16cm2*0.7mm

-0.4

-0.6

-20

Collector Current vs.

Base to Emitter Voltage

-0.7

-5

-10

-50

-2

-0.5

-0.8

-0.9

-1

-100

-200

-500

-1000

VBE-Base to Emitter Voltage-V

0-4

-40

Collector Current vs.

Collector to Emitter Voltage

-6

-20

-2

-8

-10

-60

-80

-100

VCE -Collector to Emitter Voltage -V

-1.0

Ta=75℃

VCE=-0.6V

PULSED

Ta=-25℃

IB =-50μA

IB =0

IB =-100μA

IB =-150μA

IB =-20

0μA

IB =-25

0μA

IB =-30

0μA

IB=-350

IB =-40

0μ A

IB =-

450μ

0-0.8

-400

Collector Current vs.

Collector to Emitter Voltage

-1.2

-200

-0.4

-1.6

-2.0

-600

-800

-1000

VCE -Collector to Emitter Voltage -V

IB =-0.5mA

IB =-1.0mA

I B=-1.5mA

I B=-2.0mA

IB= -2.5mA

IB= -3.0mA

I B= -3.5mA

I B= -4.0mA

IB = -4.5mA

I B= -5.0mA

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