2SC3356 datasheet(1/3 Pages) UTC

Part #	2SC3356

Description	HIGH FREQUENCY LOW NOISE AMPLIFIER

PDF	3 Pages

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC 2SC3356

NPN SILICON EPITAXIAL TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R206-024,B

HIGH FREQUENCY LOW NOISE

AMPLIFIER

FEATURES

*Low Noise and High Gain

*High Power Gain

MARKING

SOT-23

1

2

3

1: EMITTER 2: BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector-base voltage

VCBO

20

V

Collector-emitter voltage

VCEO

12

V

Emitter-base voltage

VEBO

3

V

Collector current

Ic

100

mA

Total power dissipation

PT

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cutoff Current

ICBO

VCB=10V, IE=0

1.0

µA

Emitter Cutoff Current

IEBO

VEB=1V, IC=0

1.0

µA

DC Current Gain

hFE

VCE=10V, IC=20mA

50

300

Gain bandwidth Product

fT

VCE=10V, IC=20mA

7

GHz

Feed-Back Capacitance

Cre

VCB=10V, IE=0, f=1.0MHz

1.0

pF

Noise figure

NF

VCE=10V, IC=7mA, f=1.0GHz

2.0

dB

CLASSIFICATION OF hFE

RANK

A

B

C

RANGE

50-160

160-240

240-300

R25

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