2SC4548 datasheet(1/4 Pages) UTC

Part #	2SC4548

Description	HIGH VOLTAGE DRIVER APPLICATION

PDF	4 Pages

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

1

QW-R208-027,A

HIGH VOLTAGE DRIVER

APPLICATION

FEATURES

*High breakdown voltage.

*Excellent hFE linearity.

SOT-89

1

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

400

V

Collector-Emitter Voltage

VCEO

400

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

Ic

200

mA

Collector Current (PULSE)

Icp

400

mA

Collector Power Dissipation

Pc

1.3

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collect-Base Breakdown Voltage

BVCBO

IC= 10

µA,IE=0

400

V

Collect-Emitter Breakdown Voltage

BVCEO

IC= 1mA,IB=0,RBE=

∞

400

V

Emitter-Base Breakdown Voltage

BVEBO

IE= 10

µA,IC=0

5

V

Collector Cutoff Current

ICBO

VCB= 300V,IE=0

0.1

µA

Emitter Cutoff Current

IEBO

VEB=4V,IC=0

0.1

µA

DC Current Transfer Ratio

hFE

VCE=10V, Ic=50mA

60

200

Collect-Emitter Saturation Voltage

VCE(sat)

IC=50mA,IB=5mA

0.6

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=50mA,IB=5mA

1.0

V

Output Capacitance

Cob

VCB=30V, f=1MHz

4

pF

Reverse Transfer Capacitance

Cre

VCB=30V,f=1MHz

3

pF

Gain-Bandwidth Product

fT

VCE=30V,IC=10mA

70

MHz

Turn-on Time

ton

See test circuit

0.25

µs

Turn-off Time

toff

See test circuit

5.0

µs

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