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2SD2136 Datasheet(PDF) 1 Page - Unisonic Technologies |
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2SD2136 Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UTC2SD2136 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R204-011,A POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification FEATURES *High forward current transfer ratio hFE which has satisfactory linearity. *Low collector to emitter saturation voltage VCE(sat) *Allowing supply with the radial taping. TO-126 1 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current Ic 3 A Peak Collector Current Icp 5 A Collector Dssipation Pc 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Voltage VCEO Ic=30mA ,IB=0 60 V Collector Cut-off Current ICEO VCE=60V,IB=0 300 µA Collector Cut-off Current ICES VCE=60V,VBE=0 200 µA Emitter Cut-off Current IEBO VEB=6V,Ic=0 1 mA hFE1* VCE=4V,Ic=1A 40 250 DC Current Transfer Ratio hFE2 VCE=4V,Ic=3A 10 Collector-Emitter Saturation Voltage VCE(sat) Ic=3A,IB=0.375A 1.2 V Base-Emitter Voltage VBE VCE=4V,Ic=3A 1.8 V Transition Frequency fT VCE=5V,IE= -0.1A,f=200MHz 220 MHz Fall time tf 0.4 µS Turn on time ton 0.5 µS Storage Time tstg Ic=1A, IB1=0.1A, IB2= -0.1A 2.5 µS |
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