2SD2470

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R216-003,D

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

15

V

Collector-Emitter Voltage

10

V

Emitter-Base Voltage

10

V

Collector Current (DC)

5

A

Collector Current (PULSE)*

8

A

Collector Power Dissipation

0.4

W

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

* Single Pulse =10ms

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

15

V

Collector Emitter Breakdown Voltage

10

V

Emitter Base Breakdown Voltage

10

V

Collector Cut-Off Current

0.1

µA

Emitter Cut-Off Current

0.5

µA

DC Current Gain

270

820

Collector-Emitter Saturation Voltage

0.25

0.5

V

Transition Frequency

170

MHz

Output Capacitance

30

pF

RANK

S

E

RANGE

270~560

450~820