BU941 datasheet(2/4 Pages) UTC

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UTCBU941

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R203-025,A

ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Emitter Sustaining Voltage

VCEO(sus)*

Ic=100mA, Vclamp=400V, L=10mH

(see fig. 1)

400

Collector Cut-off Current

ICES

VCE=500V, VBE=0

VCE=500V, VBE=0, Tj=125

°C

100

0.5

Collector Cut-off Current

ICEO

VCE=450V, IB=0

VCE=450V, IB=0, Tj=125

°C

100

0.5

Emitter Cut-off Current

IEBO

VEB=5V, Ic=0

Collector-Emitter Saturation Voltage

VCE(sat)*

IC=8A, IB=100mA

IC=10A, IB=250mA

IC=12A, IB=300mA

1.6

1.8

Base-Emitter Saturation Voltage

VBE(sat)*

IC=8A, IB=100mA

IC=10A, IB=250mA

IC=12A, IB=300mA

2.2

2.5

2.7

DC Current Gain

HFE*

VCE=10V, Ic=5A,

300

Diode Forward Voltage

IF=10A

2.5

Functional Test

Vcc=24V, Vclamp=400V, L=7mH

(see Functional Test Circuit)

Fall Time

Storage Time

Vcc=12V, Vclamp=300V, VBE=0,

RBE=47Ω, L=7mH, Ic=7A, IB=70mA

(see fig.2)

0.5

*Pulsed: Pulse duration=300μs, duty cycle 1.5%

Vcc=16V

20ms

Vclamp

T.U.T.

Fig. 1 Sustaining Voltage Test Circuit

12V

Vin

47Ω

T.U.T.

Vclamp

7mH

Fig. 2 Switching Time Test Circuit

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