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BUT11 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUT11 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() 1997 Aug 13 4 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A Fig.4 Forward bias SOAR. Tmb ≤ 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs. IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 5 ms. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits. handbook, full pagewidth MGB950 1 10 102 103 104 VCE (V) 10 10−1 10−2 102 10−3 IC (A) (1) (2) I II III IV IC max BUT11 BUT11A 1 ms 2 ms 10 ms DC 200 µs 500 µs tp = 20 µs 100 µs 50 µs δ = 0.01 ICM max |
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