PZTA92 datasheet(2/3 Pages) UTC

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UTCPZTA92/93 PNP EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R207-006,B

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

UTC PZTA92

UTC PZTA93

BVCBO

Ic=-100

µA,IE=0

-300

-200

Collector-Emitter Breakdown Voltage

UTC PZTA92

UTC PZTA93

BVCEO

Ic=-1mA,IB=0

-300

-200

Emitter-Base Breakdown Voltage

BVEBO

IE=-100

µA,Ic=0

-5

Collector Cut-Off Current

UTC PZTA92

UTC PZTA93

ICBO

VCB=-200V,IE=0

VCB=-160V,IE=0

-0.25

µA

Emitter Cut-Off Current

IEBO

VEB=-3V,Ic=0

-0.10

µA

DC Current Gain(note)

hFE

VCE=-10V,Ic=-1mA

VCE=-10V,Ic=-10mA

VCE=-10V,Ic=-30mA

Collector-Emitter Saturation Voltage

VCE(sat)1

Ic=-20mA,IB=-2mA

-0.5

Base-Emitter Saturation Voltage

VBE(sat)1

Ic=-20mA,IB=-2mA

-0.90

Current Gain Bandwidth Product

VCE=-20V,Ic=-10mA,

f=100MHz

MHz

Collector Base Capacitance

UTC PZTA92

UTC PZTA93

Ccb

VCB=-20V,IE=0

f=1MHz

Note:Pulse test:PW<300

µs,Duty Cycle<2%, VCE(SAT)1<200mV(Class SIN)

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