UTCTIP122

NPNEPITAXIAL PLANAR TRANSISTOR

QW-R204-016,A

NPN EPITAXIAL TRANSISTOR

DESCRIPTION

The UTC TIP122 is a NPN epitaxial transistor, designed

for use in general purpose amplifier low-speed switching

applications.

TO-126

1

1:EMITTER 2:COLLECTOR 3:BASE

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

100

V

Collector to Emitter Voltage

100

V

Emitter to Base Voltage

5

V

Collector Current

Ic

5

A

Collector Dissipation (Tc=25℃)

40

W

Storage Temperature

Tstg

-55 ~ +150

°C

Junction Temperature

Tj

150

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector-Emitter Breakdown Voltage

100

V

Collector Cut-Off Current

200

uA

Collector-Cut-Off Current

500

uA

Emitter Cut-Off Current

2

mA

Collector-Emitter Saturation Voltage

2

V

Collector-Emitter Saturation Voltage

4

V

Base-Emitter Saturation Voltage

2.5

V

DC Current Gain

1000

1000