BUW11AF datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Aug 14

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUW11F; BUW11AF

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Measured with a half-sinewave voltage (curve tracer).

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEOsust

collector-emitter sustaining voltage

IC = 100 mA; IBoff = 0; L = 25 mH;

see Figs 5 and 6

BUW11F

400

−−

BUW11AF

450

−−

VCEsat

collector-emitter saturation voltage

BUW11F

IC = 3 A; IB = 600 mA

−−

1.5

BUW11AF

IC = 2.5 A; IB = 500 mA

−−

1.5

VBEsat

base-emitter saturation voltage

BUW11F

IC = 3 A; IB = 600 mA

−−

1.4

BUW11AF

IC = 2.5 A; IB = 500 mA

−−

1.4

ICsat

collector saturation current

VCE = 1.5 V

BUW11F

−−

BUW11AF

−−

2.5

ICES

collector-emitter cut-off current

VCE =VCESMmax; VBE = 0; note 1

−−

1mA

VCE =VCESMmax; VBE =0;

Tj = 125 °C; note 1

−−

2mA

IEBO

emitter-base cut-off current

VEB =9V; IC =0

−−

hFE

DC current gain

VCE =5V; IC = 5 mA; see Fig.7

VCE =5V; IC = 0.5 A; see Fig.7

Switching times resistive load (Figs 8 and 9)

ton

turn-on time

BUW11F

ICon = 3 A; IBon = −IBoff = 600 mA

−−

µs

BUW11AF

ICon = 2.5 A; IBon = −IBoff = 500 mA

−−

µs

storage time

BUW11F

ICon = 3 A; IBon = −IBoff = 600 mA

−−

µs

BUW11AF

ICon = 2.5 A; IBon = −IBoff = 500 mA

−−

µs

fall time

BUW11F

ICon = 3 A; IBon = −IBoff = 600 mA

−−

0.8

µs

BUW11AF

ICon = 2.5 A; IBon = −IBoff = 500 mA

−−

0.8

µs

Switching times inductive load (Figs 10 and 11)

storage time

BUW11F

ICon = 3 A; IB = 600 mA;

VCL = 250 V; Tc = 100 °C

−

2.5

µs

BUW11AF

ICon = 2.5 A; IB = 500 mA;

VCL = 300 V; Tc = 100 °C

−

2.5

µs

fall time

BUW11F

ICon = 3 A; IB = 600 mA;

VCL = 250 V; Tc = 100 °C

−

200

300

BUW11AF

ICon = 2.5 A; IB = 500 mA;

VCL = 300 V; Tc = 100 °C

−

200

300

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