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BUW12AF Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUW12AF Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 12 page ![]() 1997 Aug 14 8 Philips Semiconductors Product specification Silicon diffused power transistors BUW12F; BUW12AF Fig.8 Test circuit for collector-emitter sustaining voltage. handbook, halfpage MGE252 + 50 V 100 to 200 Ω 30 to 60 Hz L 6 V oscilloscope vertical horizontal 1 Ω 300 Ω Fig.9 Oscilloscope display for collector-emitter sustaining voltage. handbook, halfpage MGE239 IC (mA) 250 200 100 0 min VCEOsust VCE (V) Fig.10 Collector-emitter saturation voltage as a function of base current. Tj =25 °C. (1) IC =3A. (2) IC =6A. (3) IC =8A. handbook, halfpage 10−2 10−1 10−1 1 10 1 VCEsat (V) IB (A) 10 MGB872 (1) (2) (3) Fig.11 DC current gain; typical values. Tj = 125 °C. handbook, halfpage MBC096 102 10−2 10−1 110 102 10 1 IC (A) hFE VCE = 5 V 1V |
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