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4124 Datasheet(PDF) 1 Page - Unisonic Technologies |
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4124 Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UTC4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 www.unisonic.com QW-R204-019,A HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed TO-126 1 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:4124L ABSOLUTE MAXIMUM RATINGS (Tc = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 1.5 A Peak Collector Consume Dissipation PC 20 W Peak Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (Ta = 25℃) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Sustaining Voltage VCEO (SUS) IC=10mA, IB=0 200 V Collector-Base Breakdown Voltage V (BR) CBO IC=1mA, IB=0 400 V Emitter-Base Breakdown Voltage V (BR) EBO IE=1mA, IC=0 7 V Collector-Base Cutoff Current ICBO VCB=400V, IE=0 100 µA Collector-Emitter Cutoff Current ICEO VCE=200V, IB=0 100 µA Emitter-Base Cutoff Current IEBO VEB=7V, Ic=0 100 µA hFE (1) VCE=10V, Ic=0.2A 10 60 DC Current Gain hFE (2) VCE=5V, Ic=1.5A 5 40 IC=0.4A, IB=0.1A 0.5 V Collector-Emitter Saturation Voltage VCE (sat) IC=1.5A, IB=0.5A 2 V Base-Emitter Saturation Voltage VBE (sat) IC=0.8A, IB=0.2A 1.2 V Fall Time tf IC=1A, IB1= -IB2 = 0.2A 0.7 µs Storage Time ts IC=1A, IB1= -IB2 = 0.2A 4 µs Cut-off Frequency fT VCE=10V, Ic=0.1A 4 MHz |
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