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4126 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 4126
Description  HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4126 Datasheet(HTML) 2 Page - Unisonic Technologies

  4126 Datasheet HTML 1Page - Unisonic Technologies 4126 Datasheet HTML 2Page - Unisonic Technologies 4126 Datasheet HTML 3Page - Unisonic Technologies 4126 Datasheet HTML 4Page - Unisonic Technologies  
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4126
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R204-021,B
ABSOLUATE MAXIUM RATINGS (Tc = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
200
V
Collector-Emitter Voltage
VEBO
7
V
Peak Collector Current
IC
3
A
Peak Collector Consume Dissipation
PD
40
W
Peak Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Maintenance
Voltage
VCEO (SUS)
IC=10mA, IB=0
200
V
Collector-Base Breakdown Voltage
V (BR) CBO
IC=1mA, IB=0
400
V
Emitter-Base Breakdown Voltage
V (BR) EBO
IE=1mA, IC=0
7
V
Collector-Base Cutoff Current
ICBO
VCB=400V, IE=0
100
µA
Collector-Emitter Cutoff Current
ICEO
VCE=200V, IB=0
100
µA
Emitter-Base Cutoff Current
IEBO
VEB=7V, Ic=0
100
µA
hFE (1)
VCE=10V, Ic=0.5A
10
60
DC Current Gain
hFE (2)
VCE=5V, Ic=3A
5
40
IC=0.5A, IB=0.1A
0.5
V
Collector-Emitter Saturation Voltage
VCE (sat)
IC=2A, IB=0.5A
1.5
V
Base-Emitter Saturation Voltage
VBE (sat)
IC=1A, IB=0.25A
1.2
V
Fall Time
tf
IC=1A, IB1= -IB2 = 0.2A
0.7
µs
Storage Time
ts
IC=1A, IB1= -IB2 = 0.2A
4
µs
Feature Frequency
fT
VCE=10V, Ic=0.1A
4
MHz



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