© Semiconductor Components Industries, LLC, 2005

August, 2005 − Rev. 1

1

Publication Order Number:

TIP131/D

TIP131, TIP132 (NPN),

TIP137 (PNP)

Preferred Devices

Darlington Complementary

Silicon Power Transistors

Designed for general−purpose amplifier and low−speed switching

applications.

Features

= 4.0 Adc

= 100 Vdc (Min) − TIP132, TIP137

MAXIMUM RATINGS

Rating

Symbol

TIP131

TIP132

TIP137

Unit

Collector−Emitter Voltage

80

100

Vdc

Collector−Base Voltage

80

100

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector Current − Continuous

Peak

8.0

12

Adc

Base Current

300

mAdc

70

W

2.0

W

Operating and Storage Junction,

Temperature Range

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Case

1.78

_C/W

Thermal Resistance,

Junction−to−Ambient

63.5

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

TIP131

TO−220

TO−220AB

CASE 221A

STYLE 1

50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

MARKING

DIAGRAM

DARLINGTON 8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLTS, 70 WATTS

http://onsemi.com

1

2

3

4

TIP132

TO−220

50 Units/Rail

TIP137

TO−220

50 Units/Rail

TIP131G

TO−220

(Pb−Free)

50 Units/Rail

TIP132G

TO−220

(Pb−Free)

50 Units/Rail

TIP137G

TO−220

(Pb−Free)

50 Units/Rail

TIP13x

= Device Code

x

= 1, 2, or 7

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

TIP13xG

AYWW