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MMVL409T1 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MMVL409T1
Description  Silicon Tuning Diode
PDF  3 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMVL409T1 Datasheet(HTML) 2 Page - ON Semiconductor

  MMVL409T1 Datasheet HTML 1Page - ON Semiconductor MMVL409T1 Datasheet HTML 2Page - ON Semiconductor MMVL409T1 Datasheet HTML 3Page - ON Semiconductor  
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MMVL409T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mAdc)
V(BR)R
20
−
−
Vdc
Reverse Voltage Leakage Current
(VR = 15 Vdc)
IR
−
−
0.1
mAdc
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
TCC
−
300
−
ppm/
°C
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio
C3/C8 (Note 2)
f = 1.0 MHz
Device
Min
Nom
Max
Min
Min
Max
MMVL409T1
26
29
32
200
1.5
1.9
2. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
40
32
24
16
8
0
1
3
10
30
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Figure of Merit
f, FREQUENCY (MHz)
Figure 3. Leakage Current
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
10
1000
100
10
100
1000
100
−60
0.01
0.001
0
+40
+100
1.04
−75
1.02
1.00
0.98
0.96
−25
+25
+75
+125
VR = 3.0 Vdc
f = 1.0 MHz
f = 1.0 MHz
TA = 25°C
VR = 3 Vdc
TA = 25°C
VR = 15 Vdc
+120 +140
+80
+60
+20
−40
−20
0.1
1.0
10
20
2.0
0.2
0.02
0.002
0.006
0.06
0.6
6.0
60
−50
0
+50
+100
1.03
1.01
0.99
0.97
TA, AMBIENT TEMPERATURE (°C)
220



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