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MPSW13 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MPSW13
Description  One Watt Darlington Transistor NPN Silicon
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MPSW13 Datasheet(HTML) 2 Page - ON Semiconductor

  MPSW13 Datasheet HTML 1Page - ON Semiconductor MPSW13 Datasheet HTML 2Page - ON Semiconductor MPSW13 Datasheet HTML 3Page - ON Semiconductor MPSW13 Datasheet HTML 4Page - ON Semiconductor  
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MPSW13
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
30
−
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
−
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
−
100
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
5,000
10,000
−
−
−
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
−
1.5
Vdc
Base−Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
125
−
MHz
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| • ftest.
1.5
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
3.0 k
2.0 k
1.0 k
500
200
20
2.0
5.0
30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
TA = 25°C
TC = 25°C
1.0 ms
1.0 s
100 ms
Figure 1. Active Region − Safe Operating Area
DUTY CYCLE ≤ 10%



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