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MPSW63 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MPSW63
Description  One Watt Darlington Transistors PNP Silicon
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MPSW63 Datasheet(HTML) 2 Page - ON Semiconductor

  MPSW63 Datasheet HTML 1Page - ON Semiconductor MPSW63 Datasheet HTML 2Page - ON Semiconductor MPSW63 Datasheet HTML 3Page - ON Semiconductor MPSW63 Datasheet HTML 4Page - ON Semiconductor  
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MPSW63 MPSW64
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 Vdc)
MPSW63
MPSW64
(IC = −100 mAdc, VCE = −5.0 Vdc)
MPSW63
MPSW64
hFE
5,000
10,000
10,000
20,000
—
—
—
—
—
Collector−Emitter Saturation Voltage
(IC = −100 mAdc, IB = −0.1 mAdc)
VCE(sat)
—
−1.5
Vdc
Base−Emitter On Voltage
(IC = −100 mAdc, VCE = −5.0 Vdc)
VBE(on)
—
−2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product(2)
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
fT
125
—
MHz
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| • ftest.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. DC Current Gain
Figure 2. “ON” Voltage
Figure 3. Collector Saturation Region
−1.0
−2.0
−0.5
IC, COLLECTOR CURRENT (mA)
200
50
5.0
3.0
2.0
−1.0
−100
−0.3
IC, COLLECTOR CURRENT (mA)
−1.6
−2.0
−0.8
−0.4
0
IB, BASE CURRENT (mA)
−0.6
−30
−10
−20
−7.0
−100
−200
−50
70
−3.0 −5.0 −10
−50
−2.0
−1.6
−1.4
−1.2
−1.0
−30
−70
−300
−5.0
−3.0
−0.7
30
100
−300
−1.2
−0.3
−100
−0.1
−1.0 −3.0 −10 −30
−300 −1 k
−0.3
10
7.0
20
−0.5
−3 k −10 k
−0.8
−1.8
TJ = 25°C
IC = −10 mA
−50 mA −100 mA −175 mA
−300 mA
TJ = 25°C
IC/IB = 100
TJ = 125°C
25°C
−55°C
−10 V
VCE = −2.0 V
−5.0 V
VBE(sat) @ IC/IB = 100
VCE(sat) @ IC/IB = 1000
VBE(on) @ VCE = −5.0 V



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