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BYD11K Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYD11K
Description  Controlled avalanche rectifiers
PDF  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD11K Datasheet(HTML) 2 Page - NXP Semiconductors

  BYD11K Datasheet HTML 1Page - NXP Semiconductors BYD11K Datasheet HTML 2Page - NXP Semiconductors BYD11K Datasheet HTML 3Page - NXP Semiconductors BYD11K Datasheet HTML 4Page - NXP Semiconductors BYD11K Datasheet HTML 5Page - NXP Semiconductors BYD11K Datasheet HTML 6Page - NXP Semiconductors BYD11K Datasheet HTML 7Page - NXP Semiconductors  
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1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER
MARKING CODE
BYD11D
11D
BYD11G
11G
BYD11J
11J
BYD11K
11K
BYD11M
11M
MAM196
k
a
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD11D
200
V
BYD11G
400
V
BYD11J
600
V
BYD11K
800
V
BYD11M
1000
V
VRWM
crest working reverse voltage
BYD11D
200
V
BYD11G
400
V
BYD11J
600
V
BYD11K
800
V
BYD11M
1000
V
VR
continuous reverse voltage
BYD11D
200
V
BYD11G
400
V
BYD11J
600
V
BYD11K
800
V
BYD11M
1000
V



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