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BYD12G Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYD12G
Description  Controlled avalanche rectifiers
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD12G Datasheet(HTML) 2 Page - NXP Semiconductors

  BYD12G Datasheet HTML 1Page - NXP Semiconductors BYD12G Datasheet HTML 2Page - NXP Semiconductors BYD12G Datasheet HTML 3Page - NXP Semiconductors BYD12G Datasheet HTML 4Page - NXP Semiconductors BYD12G Datasheet HTML 5Page - NXP Semiconductors BYD12G Datasheet HTML 6Page - NXP Semiconductors BYD12G Datasheet HTML 7Page - NXP Semiconductors BYD12G Datasheet HTML 8Page - NXP Semiconductors  
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1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYD12 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD120) and symbol.
handbook, halfpage
ka
MGL571
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD12D
200
V
BYD12G
400
V
BYD12J
600
V
BYD12K
800
V
BYD12M
1000
V
VR
continuous reverse voltage
BYD12D
200
V
BYD12G
400
V
BYD12J
600
V
BYD12K
800
V
BYD12M
1000
V
IF(AV)
average forward current
Tamb =25 °C; printed-circuit board
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period,
see Fig.2
0.82
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj =25 °C prior to surge;
VR =VRRMmax
15
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.3
−65
+175
°C



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