BYD31 datasheet(3/9 Pages) PHILIPS

3 / 9 page

1996 Sep 18

Not recommended for new designs

Philips Semiconductors

Product speciﬁcation

Fast soft-recovery

controlled avalanche rectiﬁers

BYD31 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

PRSM

non-repetitive peak reverse power

dissipation

t=20

µs half sine wave; Tj =Tj max

prior to surge

BYD31D to J

−

100

BYD31K and M

−

Tstg

storage temperature

−65

+175

°C

junction temperature

see Fig.7

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF = 0.5 A; Tj =Tj max;

see Fig.8

−−

1.15

IF = 0.5 A;

see Fig.8

−−

1.35

V(BR)R

reverse avalanche breakdown

voltage

IR = 0.1 mA

BYD31D

300

−−

BYD31G

500

−−

BYD31J

700

−−

BYD31K

900

−−

BYD31M

1100

−−

reverse current

VR =VRRMmax;

see Fig.9

−−

µA

VR =VRRMmax;

Tj = 165 °C; see Fig.9

−−

µA

trr

reverse recovery time

when switched from

IF = 0.5 A to IR =1A;

measured at IR = 0.25A

see Fig.12

BYD31D to J

−−

250

BYD31K and M

−−

300

diode capacitance

f = 1 MHz; VR =0V;

see Fig.10

−

maximum slope of reverse recovery

current

when switched from

IF = 1 A to VR ≥ 30 V

and dIF/dt = −1A/µs;

see Fig.13

BYD31D to J

−−

6A/

µs

BYD31K and M

−−

5A/

µs

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

--------

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