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BYD31M Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYD31M Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 9 page ![]() 1996 Sep 18 2 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass package through Implotec ™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. Fig.1 Simplified outline (SOD91) and symbol. MAM196 k a LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD31D − 200 V BYD31G − 400 V BYD31J − 600 V BYD31K − 800 V BYD31M − 1000 V VR continuous reverse voltage BYD31D − 200 V BYD31G − 400 V BYD31J − 600 V BYD31K − 800 V BYD31M − 1000 V IF(AV) average forward current Ttp =55 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 − 440 mA Tamb =60 °C; PCB mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 − 320 mA IFRM repetitive peak forward current Ttp =55 °C; see Fig.4 − 4A Tamb =60 °C; see Fig.5 − 3A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 5A |
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