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BYG85B Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYG85B
Description  Fast soft-recovery rectifier
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYG85B Datasheet(HTML) 2 Page - NXP Semiconductors

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1998 Nov 25
2
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
Top view
Side view
cathode
band
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
100
V
VR
continuous reverse voltage
−
100
V
IF(AV)
average forward current
Ttp = 100 °C; averaged over any
20 ms period; see Figs 2 and 7
−
2.5
A
IF(AV)
average forward current
Tamb =60 °C; AL2O3 PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
−
1.3
A
IF(AV)
average forward current
Tamb =60 °C; epoxy PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
−
0.98
A
IFRM
repetitive peak forward current
Ttp = 100 °C; see Fig.3
−
23
A
IFRM
repetitive peak forward current
Tamb =60 °C; AL2O3 PCB mounting;
see Fig.5
−
12
A
IFRM
repetitive peak forward current
Tamb =60 °C; epoxy PCB mounting;
see Fig.6
−
8.5
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
−
35
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C



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