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BYG85B Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYG85B Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1998 Nov 25 2 Philips Semiconductors Product specification Fast soft-recovery rectifier BYG85B FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. handbook, 4 columns MSA474 Top view Side view cathode band ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF(AV) average forward current Ttp = 100 °C; averaged over any 20 ms period; see Figs 2 and 7 − 2.5 A IF(AV) average forward current Tamb =60 °C; AL2O3 PCB mounting (see Fig.11); averaged over any 20 ms period; see Fig.3 − 1.3 A IF(AV) average forward current Tamb =60 °C; epoxy PCB mounting (see Fig.11); averaged over any 20 ms period; see Fig.3 − 0.98 A IFRM repetitive peak forward current Ttp = 100 °C; see Fig.3 − 23 A IFRM repetitive peak forward current Tamb =60 °C; AL2O3 PCB mounting; see Fig.5 − 12 A IFRM repetitive peak forward current Tamb =60 °C; epoxy PCB mounting; see Fig.6 − 8.5 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 35 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C |
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