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BYG50M Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYG50M
Description  Controlled avalanche rectifiers
PDF  6 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYG50M Datasheet(HTML) 2 Page - NXP Semiconductors

  BYG50M Datasheet HTML 1Page - NXP Semiconductors BYG50M Datasheet HTML 2Page - NXP Semiconductors BYG50M Datasheet HTML 3Page - NXP Semiconductors BYG50M Datasheet HTML 4Page - NXP Semiconductors BYG50M Datasheet HTML 5Page - NXP Semiconductors BYG50M Datasheet HTML 6Page - NXP Semiconductors  
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1996 May 24
2
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYG50 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC; SOD106 surface
mountable package with glass
passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
Top view
Side view
cathode
band
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG50D
−
200
V
BYG50G
−
400
V
BYG50J
−
600
V
BYG50K
−
800
V
BYG50M
−
1000
V
VR
continuous reverse voltage
BYG50D
−
200
V
BYG50G
−
400
V
BYG50J
−
600
V
BYG50K
−
800
V
BYG50M
−
1000
V
IF(AV)
average forward current
averaged over any 20 ms
period; Ttp = 100 °C; see Fig.2
−
2.1
A
averaged over any 20 ms
period; Al2O3 PCB mounting (see
Fig.7); Tamb =60 °C; see Fig.3
−
1.0
A
averaged over any 20 ms
period; epoxy PCB mounting
(see Fig.7); Tamb =60 °C;
see Fig.3
−
0.7
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj =Tj max prior to surge;
VR =VRRMmax
−
30
A



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