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BYG50M Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYG50M Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page ![]() 1996 May 24 2 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYG50 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape. DESCRIPTION DO-214AC; SOD106 surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. handbook, 4 columns MSA474 Top view Side view cathode band ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYG50D − 200 V BYG50G − 400 V BYG50J − 600 V BYG50K − 800 V BYG50M − 1000 V VR continuous reverse voltage BYG50D − 200 V BYG50G − 400 V BYG50J − 600 V BYG50K − 800 V BYG50M − 1000 V IF(AV) average forward current averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 − 2.1 A averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 − 1.0 A averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 − 0.7 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax − 30 A |
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