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T1235H Datasheet(PDF) 3 Page - STMicroelectronics |
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T1235H Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() T1235H 3/8 Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) Figure 2: RMS on-state current versus case temperature (full cycle) Figure 3: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle) Figure 4: Relative variation of thermal impedance versus pulse duration Figure 5: On-state characteristics (maximum values) Figure 6: Surge peak on-state current versus number of cycles P(W) 02 46 8 10 12 0 2 4 6 8 10 12 14 I (A) T(RMS) I (A) T(RMS) 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 T (°C) C 0 25 50 75 100 125 150 0 1 2 3 4 5 I (A) T(RMS) T (°C) C DPAK (S=1cm ) 2 2 K=[Z /R th th] 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 t (s) p Zth(j-c) Zth(j-a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 200 I (A) TM V (V) TM T= j T max. j T = 25°C j . T max. V = 0.85V R = 50 m j to d Ω 1 10 100 1000 0 25 50 75 100 125 150 I (A) TSM Number of cycles t=20ms One cycle Non repetitive T initial=25°C j Repetitive T =135°C C |
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