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IXFX400N15 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # IXFX400N15
Description  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFX400N15 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  IXFX400N15 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXFX400N15 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXFX400N15 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc N-Channel MOSFET Transistor
IXFX400N15
www.iscsemi.com
2023-09-04
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.25mA
150
-
-
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 0.25mA
2.5
-
4.5
V
RDS(ON)
Drain-Source On-stage Resistance VGS= 10V; ID= 200A
-
-
3
mΩ
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0V
-
-
±
200
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 150V, VGS = 0V
-
-
25
μA
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
-
24.7
-
nF
Coss
Output Capacitance
-
3750
-
pF
Crss
Reverse Transfer Capacitance
-
145
-
pF
Qg
Total Gate Charge
VDS= 75V,
ID = 200A,
VGS = 10V
-
375
-
nC
Qgs
Gate-Source Charge
-
89
-
Qgd
Gate-Drain Charge
-
106
-
td(on)
Turn-on Delay Time
VDS= 75V,
ID = 200A,
VGS = 10V,
RG = 1Ω(External)
-
39
-
ns
tr
Turn-on Rise Time
-
33
-
td(off)
Turn-off Delay Time
-
215
-
tf
Turn-off Fall Time
-
20
-
Source-Drain Body Diode Characteristics
ISD
Continuous Source Current
Tc = 25 ºC
-
-
400
A
ISM
Pulsed Source Current
-
-
1600
VSD
Diode Forward Voltage
ISD= 100A; VGS= 0V
-
-
1.4
V
trr
Reverse Recovery Time
VR = 100V,IF = 150A,
diF/dt = 100A /μs
-
100
-
ns
Qrr
Reverse Recovery Charge
-
800
-
nC



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